Analyzing and Eliminating Die Passivation Crack in a Power Leadframe Package using Submodeling Approach
Journal of Engineering Research and Reports,
Page 1-6
DOI:
10.9734/jerr/2019/v7i216964
Abstract
This paper presents the submodeling approach in thermo-mechanical simulation of the die passivation crack encountered in a power leadframe package subjected to temperature cycling condition. Without using modeling and simulation in resolving semiconductor package development issues, the process would be very costly and time-consuming. For die passivation crack, the details of the different layers of the die passivation need to be modeled and this would result in a large simulation model with considerable solution time. However, a technique known as submodeling can be used to reduce solution time without sacrificing accuracy of results. In this study, submodeling was successfully used to analyze the stresses in the critical passivation layer that resulted in the best design that eliminated the passivation crack. The modeling result showed that the crack could be eliminated by using the right passivation material layer combination and thickness. An increase in the thickness of the material layers and the additional of sublayers have provided significant stress reduction in the topmost critical passivation layer resulting in crack elimination.
Keywords:
- Passivation crack
- submodeling
- thermal cycling
- finite element analysis
- power package.
How to Cite
References
Huang M, Suo Z, Ma Q, Fujimoto H. Thin film cracking and ratcheting caused by temperature cycling. Journal of Materials Research. 2000;15(6):1239-1242.
ANSYS Manual, ANSYS Release 10.0; 2005.
Huang X, Zhu L, Nguyen B, Tran V, Isom H. Passivation stress versus top metal profiles by 3D finite element modeling. Proc CS MANTECH Conference; 2013.
He YT, Li HP, Shi R, Li F, Zhang GQ, Ernst LJ. Passivation cracking analyses of Micro-structures of IC packages. In Key Engineering Materials. 2006;324:515-518. Trans Tech Publications.
He YT, Van Gils MAJ, Van Driel WD, Zhang GQ, Van Silfhout RB, Ernst LJ. Prediction of crack growth in IC passivation layers. Microelectronics Reliability. 2004;44(12):2003-2009.
Van Silfhout RBR, van Driel WD, Li Y, van Gils MAJ, Janssen JHJ, Zhang GQ, Ernst LJ. Effect of metal layout design on passivation crack occurrence using both experimental and simulation techniques. In 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, 2004. EuroSimE 2004. Proceedings of the (2004, May). IEEE. 2004;69-74.
Prorok BC, Espinosa HD. Effects of nanometer-thick passivation layers on the mechanical response of thin gold films. Journal of Nanoscience and Nanotechnology. 2002;2(3-4);427-433.
Nayak R. Submodeling Technique in Stress Analysis. HCL Technologies; 2011.
Zhang XR, Zhu WH, Liew BP, Gaurav M, Yeo A, Chan KC. Copper pillar bump structure optimization for flip chip packaging with Cu/Low-K stack. In 2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE. 2010;1-7.
Van Driel WD, Wisse G, Chang AY, Janssen JH, Fan X, Zhang KG, Ernst LJ. Influence of material combinations on delamination failures in a cavity-down TBGA package. IEEE Transactions on Components and Packaging Technologies. 2004;27(4):651-658.
-
Abstract View: 2063 times
PDF Download: 990 times
